2sd2701 transistors rev.c 1/1 low frequency amplifier 2sd2701 ? application low frequency amplifier driver ? features 1) a collector current is large. 2) v ce(sat) Q 350mv at i c = 1a / i b = 50ma ? dimensions (unit : mm) (1) base(2) emitter (3) collector rohm : tumt3 abbreviated symbol : fz 0.2max. ? absolute maximum ratings (ta=25 ? c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 3030 6 1.50.4 0.8 150 55 to + 150 3 ? 1 ? 1 unit vv v a a w c c collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature ? 1 single pulse, p w = 1ms ? 2 mounted on a 25 25 0.8mm ceramic substrate t ? packaging specifications 2sd2701 tl 3000 type packagecode basic ordering unit (pieces) taping ? electrical characteristics (ta=25 ? c) parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz f t 300 mhz v ce = 2v, i e = 100ma, f = 100mhz bv cbo 30 v i c = 10 a bv ceo 30 v i c = 1ma bv ebo 6 v i e = 10 a i cbo 100 na v cb = 30v i ebo 100 na v eb = 6v v ce(sat) 140 350 mv i c = 1a, i b = 50ma h fe 270 680 v ce = 2v, i c = 100ma cob 11 pf ? ? collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency corrector output capacitance ? pulsed downloaded from: http:///
2sd2701 transistors rev.c 2/2 ? electrical characteristic curves 0.001 0.01 0.1 1 10 collector current : i c (a) 10 dc current gain : h fe 1000 100 ta = 100 c ta = 40 c ta = 25 c v ce = 2v pulsed fig.1 dc current gain vs. collector current 0.1 0.01 10 1 0.001 0.01 0.1 10 1 collector current : i c (a) base saturation voltage : v be (sat) (v) collector saturation voltage : v ce (sat) (v) ta = 25 c ta = 25 c ta = 40 c ta = 40 c ta = 100 c ta = 100 c v be(sat) v ce(sat) i c /i b = 20 pulsed i c /i b = 20/1 pulsed fig.2 collector-emitter saturation voltage base-emitter saturation voltagevs. collector current 0.001 0.01 0.1 1 10 collector current : i c (a) 0.01 collector saturation voltage : v ce(sat) (v) 0.1 1 ta = 25 c pulsed i c /i b = 10/1 i c /i b = 20/1 i c /i b = 50/1 fig.3 collector-emitter saturation voltage vs. collector current 0 0.5 1 1.5 base to emitter current : v be (v) 0.001 collector current : i c (a) 0.01 1 0.1 v ce = 2v pulsed ta = 100 c ta = 25 c ta = 40 c fig.4 grounded emitter propagation characteristics 0.01 0.1 1 10 emitter current : i e (a) 10 transition frequency : f t (mhz) 1000 100 ta = 25 c v ce = 2v f = 100mhz fig.5 gain bandwidth product vs. emitter current 0.01 0.1 1 10 collector current : i c (a) 1 10 1000 100 ta = 25 c v ce = 5v f = 100mhz tstg tdon tr tf fig.6 switching time switching time : (ns) 1 10 100 0.1 1 10 100 1000 f = 1mhz i c = 0a ta = 25 c collector output capacitance : cob (pf) emitter input capacitance : cib (pf) cib cob fig.7 collector output capacitance vs. collector-base voltageemitter input capacitance vs. emitter-base voltage emitter to base voltage : v eb ( v) collector to base voltage : v cb ( v) downloaded from: http:///
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